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International Journal of Materials and Product Technology (IJMPT)

International Journal of Materials and Product Technology

2005 Vol.22 No.1/2/3

Special Issue on Crystal Growth of Semiconductors from the Liquid Phase

Guest Editor: Professor Sadik Dost

Pages	Title and author(s)
2-19	Use of an axial magnetic field to suppress convection in the solvent of Ge_0.98Si_0.02 grown by the travelling solvent method L. Abidi, M.Z. Saghir, D. Labrie DOI: 10.1504/IJMPT.2005.005744
20-34	A numerical study of the buoyancy convection occurring during the formation of InGaSb solution in a GaSb/InSb/GaSb sandwich system K. Arafune, N. Murakami, T. Kimura, M. Kumagawa, Y. Hayakawa, T. Ozawa, Y. Okano, S. Dost DOI: 10.1504/IJMPT.2005.005745
35-49	Heating flux effects on floating zone growth under micro-gravity conditions R. Bennacer, M. El Ganaoui, E. Semma, A. Cheddadi DOI: 10.1504/IJMPT.2005.005746
50-63	Epitaxial lateral overgrowth of semiconductor structures by liquid phase epitaxy D. Dobosz, Z.R. Zytkiewicz DOI: 10.1504/IJMPT.2005.005747
64-83	Dislocation-free CZ-Si crystal growth without the thin Dash-neck Xinming Huang, Toshinori Taishi, Keigo Hoshikawa DOI: 10.1504/IJMPT.2005.005748
84-94	Heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system with transverse magnetic fields Koichi Kakimoto, Takashige Shinozaki, Yoshio Hashimoto DOI: 10.1504/IJMPT.2005.005749
95-104	Improvement of compositional homogeneity in In_1-xGa_xAs bulk crystals grown by the travelling liquidus-zone method K. Kinoshita, Y. Ogata, N. Koshikawa, S. Adachi, S. Yoda, M. Iwai, T. Tsuru, Y. Muramatsu DOI: 10.1504/IJMPT.2005.005750
105-121	Homogeneity of Ge_1-xSi_x alloys (x≤0.30) grown by the travelling solvent method D. Labrie, A.E. George, M. Jamieson, S. Obruchkov, J.P. Healey, B.E. Paton, M.Z. Saghir DOI: 10.1504/IJMPT.2005.005751
122-134	Unsteadiness and control by using thermal boundary modulation in restricted fluid domain of vertical Bridgman apparatus E. Semma, M. El Ganaoui, V. Timchenko, E. Leonardi DOI: 10.1504/IJMPT.2005.005760
135-150	Three-dimensional modelling of Ge_1-xSi_x by the travelling solvent method in the presence of coriolis and centrifugal forces T.J. Makriyannis, M.Z. Saghir, D. Labrie DOI: 10.1504/IJMPT.2005.005761
151-171	A three-dimensional numerical study of Marangoni convection in a floating full zone Hisashi Minakuchi, Yasunori Okano, Sadik Dost DOI: 10.1504/IJMPT.2005.005762
172-184	An experimental study for the role of natural convection in the dissolution of GaSb into InSb melt, and the growth of In_xGa_1-xSb crystals N. Murakami, K. Arafune, T. Koyama, Y. Momose, M. Kumagawa, Y. Hayakawa, T. Ozawa, Y. Okano, S. Dost DOI: 10.1504/IJMPT.2005.005763
185-212	Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams Kazuo Nakajima, Yukinaga Azuma, Noritaka Usami, Gen Sazaki, Toru Ujihara, Kozo Fujiwara, Toetsu Shishido, Yoshito Nishijima, Toshihiro Kusunoki DOI: 10.1504/IJMPT.2005.005764
213-225	On some basic considerations of solid/liquid transition models under a microgravity environment R. Prud'homme, M. El Ganaoui DOI: 10.1504/IJMPT.2005.005765
226-261	Growth of AlN, GaN and InN from the solution S. Krukowski, I. Grzegory, M. Bockowski, B. Lucznik, T. Suski, G. Nowak, J. Borysiuk, M. Wroblewski, M. Leszczynski, P. Perlin, S. Porowski, J.L. Weyher DOI: 10.1504/IJMPT.2005.005766