Forthcoming articles

International Journal of Materials and Product Technology

International Journal of Materials and Product Technology (IJMPT)

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International Journal of Materials and Product Technology (5 papers in press)

Regular Issues

  • Volumetric shrinkage prediction in fused deposition modelling (FDM) process - ANFIS modelling approach   Order a copy of this article
    by Yusuf Suleiman Dambatta, Ahmed Aly Diaa Sarhan, Ibrahem Maher, Mehdi Hourmand 
    Abstract: FDM is a type of additive manufacturing technology which is being used to manufacture prototypes and functional parts. However, the volumetric shrinkage limits the functionality of the manufactured prototypes. Accurately predicting the volumetric shrinkage will diversify the applicability of this manufacturing technology because the volumetric error could be eliminated at the product specification/development stage. Also, the volumetric shrinkage prediction in the process will enable for an in-process adjustment and proper selection of the machine setting. This work involve using the layer thickness, orientation angle and structural geometry as parameters to predict the volumetric shrinkage. The prediction of the shrinkage in the FDM prototypes along both the XZ and YZ-axis was done using ANFIS. Experimental test result validates the effectiveness of the constructed ANFIS model, which has about 3.15% average prediction error. Comparison between the manufactured hollow shapes also gives the best input settings for manufacturing of the hollows in the components.
    Keywords: Volumetric shrinkage; Dimensional accuracy; ANFIS; FDM; Manufacturing.

Special Issue on: Cambridge Summit 2018 Advances in Engineering Systems and Product Technology

  • Effect of nano-yttria dispersion on the microstructure and mechanical properties of W-Ni-Co alloys   Order a copy of this article
    by Pandi Selva Durai C, Arul Mozhi Selvan Varadappan 
    Abstract: In this study, effect of nano-Y2O3 (0.25-0.75 wt.%) addition in tungsten heavy alloy which consists of 93wt.% tungsten and Ni/Co ratio fixed at 9 was investigated. Ni, Co and Y2O3were mixed in high-energy ball milling in order to obtain nanostructure and this mixture subsequently blended with tungsten (W) in a low energy ball milling. The powder mixture was consolidated by cold-isostatic pressing (CIP) and the green compact was sintered at 1475
    Keywords: Cold isostatic pressing; Contiguity; High-energy ball milling; Nano Y2O3; W-Ni-Co heavy alloy.

  • Experimental investigations and optimization of process parameters in dry finish turning of Inconel 625 super alloy   Order a copy of this article
    by S. Hemakumar, P. Kuppan 
    Abstract: This study presents an experimental investigation and optimization of process parameters in finish dry turning of Inconel 625 nickel based super alloy. The process parameters such as cutting speed and feed rate were varied for three levels keeping depth of cut constant at finish machining regime (0.5 mm). The experiments were conducted as per the full factorial design of experiments and the influence of process parameters on the output measures such as cutting force (FC), feed force (Ff), average surface roughness (Ra) and average flank wear (VB), were analyzed using ANOVA. Empirical models were developed for the output measures using Response Surface Methodology and the regression analysis shows a good degree of fit. The optimal conditions for minimum Ra and VB were obtained through response optimization Composite Desirability approach. Furthermore the tool wear mechanism was studied and reported.
    Keywords: composite desirability approach; dry machining; cutting force; Inconel 625; response surface methodology; surface roughness; tool wear.

  • Coupling reduction of two element MIMO Antenna using parasitic element for LTE Band Application   Order a copy of this article
    by A.Christina Josephine Malathi, Thiripurasundari D 
    Abstract: This paper presents a two triangular patch MIMO antenna using parasitic element for enhancing isolation which is aimed to function in the LTE band covering from 1.7 to 3.6 GHz. The parasitic element is a planar interdigital line structure placed between the patches on top of the substrate. The antenna covered an impedance bandwidth of (1.5 to 3.58) GHz with return loss of -18.16 dB and -12 dB at 2.26 and 3.25 GHz during simulation. A fractional bandwidth of 92% was achieved. An isolation of -20 dB and -20.5 dB was observed during simulation at 2.26 GHz and 3.25 GHz. The proposed antenna was fabricated and tested. It provided a bandwidth of (1.8 to 2.27) GHz & (3.2 to 3.3) GHz with return loss of -18.28 dB and -10.64 dB respectively. An isolation of -25.5 dB at 2.26 GHz and -20.5 dB at 3.25 GHz was observed during measurement amid the ports with a close by spacing of 0.074λ between antenna elements. With a very close by spacing the proposed antenna exhibits a better performance compared to the previously reported designs in the literature by providing 53.3% less space. The antenna had good radiation characteristics in both E-plane and H-plane for all the operating frequencies.The simulated envelope correlation coefficient is below 0.002 and the total active reflection coefficient is below 0.40 throughout the band with a gain of 2.28 dB and 4.30 dB during simulation and 2 dB & 3.23 dB in measurement at 2.26 and 3.25 GHz.
    Keywords: Gain; long-term evolution (LTE); envelope correlation coefficient (ECC); return loss; multiple input multiple output (MIMO); Total Active Reflection Co-efficient (TARC).

  • Random Dopant Fluctuations Impact reduction in 7 nm Bulk-FinFET by Substrate Engineering   Order a copy of this article
    by Jegadheesan V, Sivasankaran K, Aniruddha Konar 
    Abstract: Currently Fin-Field-Effect-Transistors (FinFETs) are used at 7 nm technology node, in order to avoid parasitic leakage channel under the controlled channel Punch-Through-Stopper (PTS) doping is used with the bulk Silicon substrate (PTS-Si substrate). The dopants from PTS doping enters into the channel during the annealing process and increases channel doping level. The increased doping concentration in channel causes undesirable effects such as reduction in channel mobility and increase in Random-Dopant-Fluctuations (RDFs). Using a Silicon-On-Insulator substrate (SOI substrate) is a costlier solution, this work presents Super-Steep-Retrograde-Silicon substrate (SSR-Si substrate) as a better solution for this problem. In this work, the SSR-Si substrate is achieved by placing lightly doped 10 nm thick SSR-buffer layer (Silicon) on top of PTS-Si substrate. This SSR-buffer layer captures dopants intruding from PTS doping into channel thereby achieves SSR doping profile in the channel. The results show SSR-Si substrate reduces the RDF induced threshold variations by 50%, it also provides better DC and RF/analog metrics than PTS-Si substrate and comparable with SOI substrate.
    Keywords: FinFET; RDF; SIFM; Statistical variations;.