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Vol. 1

International Journal of Nanotechnology

2014 Vol. 11 No. 1/2/3/4

Special Issue on Sustainable Nanoelectronics

Guest Editors: Qi Jie Wang, Cherming Tan, K. Radhakrishnan and Jianmin Miao

 

Editorial
PagesTitle and authors
4-14Weak-field low-temperature currents calculated by one-particle self-consistent calculation
Che-Sheng Chung; Sheng-Lyang Jang
DOI: 10.1504/IJNT.2014.059805

15-26Hydrogen ion sensing characteristics of IGZO/Si electrode in EGFET
Chia-Ming Yang; Jer-Chyi Wang; Tzu-Wen Chiang; Yi-Ting Lin; Teng-Wei Juan; Tsung-Cheng Chen; Ming-Yang Shih; Cheng-En Lue; Chao-Sung Lai
DOI: 10.1504/IJNT.2014.059806

27-39Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs
K.C. Lin; M.J. Twu; P.C. Juan; H.W. Hsu; H.S. Huang; M.C. Wang; C.H. Liu
DOI: 10.1504/IJNT.2014.059807

40-50Investigation of discrete dopant induced variability in silicon nanowire MOSFETs using 3D simulation
Chun-Yu Chen; Jyi-Tsong Lin; Meng-Hsueh Chiang
DOI: 10.1504/IJNT.2014.059808

51-61Investigation of the random dopant fluctuations in 20-nm bulk MOSFETs and silicon-on-insulator FinFETs by ion implantation Monte Carlo simulation
Keng-Ming Liu; Cheng-Kuei Lee
DOI: 10.1504/IJNT.2014.059809

62-74Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors
Mu-Chun Wang; Shea-Jue Wang; Heng-Sheng Huang; Shuang-Yuan Chen; Min-Ru Peng; Liang-Ru Ji; Ming-Feng Lu; Wen-Shiang Liao; Chuan-Hsi Liu
DOI: 10.1504/IJNT.2014.059810

75-84Field effect transport properties of chemically treated graphene quantum dots
Hemen Kalita; V. Harikrishnan; M. Aslam
DOI: 10.1504/IJNT.2014.059811

85-96InxGa1-xSb n-channel MOSFET: effect of interface states on CV characteristics
Muhammad Shaffatul Islam; Md. Nur Kutubul Alam; Md. Rafiqul Islam
DOI: 10.1504/IJNT.2014.059812

97-105Simulation study of dimensional effect on bipolar resistive random access memory
Liu Kai; Zhang Kailiang; Wang Fang; Zhao Jinshi; Wei Jun
DOI: 10.1504/IJNT.2014.059813

106-115Retention behaviour of graphene oxide resistive switching memory
Fang Yuan; Yu-Ren Ye; Chao-Sung Lai; Jer-Chyi Wang; Zhigang Zhang; Liyang Pan; Jun Xu
DOI: 10.1504/IJNT.2014.059814

116-125Characteristics of gate-all-around polycrystalline silicon channel SONOS flash memory
Joo Yun Seo; Sang-Ho Lee; Se Hwan Park; Wandong Kim; Do-Bin Kim; Byung-Gook Park
DOI: 10.1504/IJNT.2014.059815

126-134Investigation of bipolar resistive switching characteristics in Si3N4-based RRAM with metal-insulator-silicon structure
Sungjun Kim; Sunghun Jung; Byung-Gook Park
DOI: 10.1504/IJNT.2014.059816

135-144Characteristics of nitrogen plasma immersion ion implantation treatment on gadolinium oxide resistive switching random access memory
Jer-Chyi Wang; Yu-Ren Ye; Ying-Huei Wu; Chi-Fong Ai; Wen-Fa Tsai
DOI: 10.1504/IJNT.2014.059817

145-155Negative resistance characterisation and defective trap exploration in ZnO nonvolatile memory devices
Fu-Chien Chiu; Chih-Yao Huang; Wen-Yuan Chang; Tung-Ming Pan
DOI: 10.1504/IJNT.2014.059818

156-166Superior bipolar resistive switching characteristics of Cu-TiO2 based RRAM cells
Yu-Chih Huang; Huan-Min Lin; Huang-Chung Cheng
DOI: 10.1504/IJNT.2014.059819

167-177Analysis of conduction mechanism in silicon nitride-based RRAM
Sunghun Jung; Sungjun Kim; Jeong-Hoon Oh; Kyung-Chang Ryoo; Jong-Ho Lee; Hyungcheol Shin; Byung-Gook Park
DOI: 10.1504/IJNT.2014.059820

178-189Microstructural investigation of through-silicon via fabrication by pulse-reverse electroplating for high density nanoelectronics
Nay Lin; Jianmin Miao; Robert Preisser
DOI: 10.1504/IJNT.2014.059821

190-206Fabrication, characterisation and modelling of fast flexible semiconductor nanomembrane electronics
Guoxuan Qin; Guoping Tu; Tianhao Cai; Jianguo Ma; Zhenqiang Ma
DOI: 10.1504/IJNT.2014.059822

207-221Identification of mobility changes induced by deoxyribo nucleic acid in the inversion regions of ultralong single walled carbon nanotube field-effect transistor using support vector machine and multi-layer perceptron
S.V. Hari Krishna; J.N. An; L.X. Zheng
DOI: 10.1504/IJNT.2014.059823

222-229Horizontally suspended carbon nanotube bundles patterned on silicon trench sidewalls
Jingyu Lu; Jianmin Miao
DOI: 10.1504/IJNT.2014.059824

230-242Self-organised hybrid nanostructures composed of the array of vertically aligned carbon nanotubes and planar graphene multi-layer
Vladimir A. Labunov; Alena L. Pudnikava; Boris G. Shulitski; Beng Kang Tay; Maziar Shakerzadeh; Xingli Wang; Alexander S. Basaev; Viacheslav A. Galperin; Yuri P. Shaman
DOI: 10.1504/IJNT.2014.059825

243-253Gallium nitride nanowires grown by low pressure chemical vapour deposition on silicon substrate
A. Olivier; H. Wang; A. Koke; D. Baillargeat
DOI: 10.1504/IJNT.2014.059826

254-262Electrical and optical properties of p-type conductive NiO-Pt thin films
S.C. Chen; T.Y. Kuo; H.C. Lin; S.W. Hsu; Y.C. Lin
DOI: 10.1504/IJNT.2014.059827

263-273Preparation, characterisation and photocurrent study of sol-gel-derived Al, Mg-doped ZnO transparent thin films
K. Chongsri; W. Techitdheera; W. Pecharapa
DOI: 10.1504/IJNT.2014.059828

274-286Structural, optical and photo catalytic properties of Cu-doped ZnO nanoparticles synthesised by co-precipitation method
N. Thaweesaeng; S. Suphankij; W. Techitdheera; W. Pecharapa
DOI: 10.1504/IJNT.2014.059829

287-297Influences of deposition power of GZO thin films on the properties of the heterojunction diode based on a NiO/GZO bi-layer structure
Chia-Cheng Huang; Fang-Hsing Wang; Cheng-Fu Yang; Hong-Hsin Huang
DOI: 10.1504/IJNT.2014.059830

298-310Flexible and transparent reduced graphene oxide and silk fibroin composite films with kilo-ohm square resistance
Mingliang Jia; Ning Qi; Qing Dong; Hui Wang; Ke-Qin Zhang
DOI: 10.1504/IJNT.2014.059831

311-321Performance improvement of a triple-junction GaAs-based solar cell using a SiO2-nanopillar/SiO2/TiO2 graded-index antireflection coating
Jheng-Jie Liu; Wen-Jeng Ho; Jhih-Kai Syu; Yi-Yu Lee; Ching-Fuh Lin; Hung-Pin Shiao
DOI: 10.1504/IJNT.2014.059832

322-332Effect of trap depth and interfacial energy barrier on charge transport in inverted organic solar cells employing nanostructured ZnO as electron buffer layer
Naveen Kumar Elumalai; Chellappan Vijila; Rajan Jose; Zhang Jie; Seeram Ramakrishna
DOI: 10.1504/IJNT.2014.059833

333-344Synthesis of vanadium oxide/titanium dioxide nanocomposites via sonochemical and hydrothermal process and their utilisation for energy storage application
C. Kahattha; W. Techitdheera; N. Vittayakorn; W. Pecharapa
DOI: 10.1504/IJNT.2014.059834

345-358High temperature operation In(Ga)As quantum dot infrared photodetector focal plane arrays passivated with 6.5 nm-thick Al2O3 layer
Shiang-Feng Tang; Wen-Jen Lin; Tzu-Chiang Chen; Shih-Yen Lin
DOI: 10.1504/IJNT.2014.059835

359-372Improved efficiency of InGaN/GaN light-emitting diodes with Al-doped zinc oxide using dual-plasma-enhanced metal-organic chemical vapour deposition system
Po-Hsun Lei; Chia-Ming Hsu; Yu-Siang Fan; Sheng-Jhan Ye
DOI: 10.1504/IJNT.2014.059836

373-385Ab initio simulation of electronic and mechanical properties of aluminium for fatigue early feature investigation
Shuai Zhang; Cher Ming Tan; Shuguang Cheng; Tianqi Deng; Feifei He; Haibin Su
DOI: 10.1504/IJNT.2014.059837