Title: Differential conductance and capacity-voltage characteristics of MIS structures with single quantum wells based on HgTe

Authors: Dmitry I. Gorn; Alexander V. Voitsekhovskii; Stanislav M. Dzyadukh; Sergey N. Nesmelov

Addresses: Nanoelectronics and Nanophotonics Laboratory, National Research Tomsk State University, 36 Lenin av., Tomsk, 634050, Russian Federation ' Nanoelectronics and Nanophotonics Laboratory, National Research Tomsk State University, 36 Lenin av., Tomsk, 634050, Russian Federation ' Nanoelectronics and Nanophotonics Laboratory, National Research Tomsk State University, 36 Lenin av., Tomsk, 634050, Russian Federation ' Nanoelectronics and Nanophotonics Laboratory, National Research Tomsk State University, 36 Lenin av., Tomsk, 634050, Russian Federation

Abstract: The paper presents research results of the admittance of metal-insulator-semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/HgTe/HgCdTe quantum wells (QW) in the surface layer of the semiconductor structure. The thickness of a quantum well was 5.6 nm, and the composition of barrier layers with the thickness of 35 nm was close to 0.65. Measurements were conducted in the range of temperatures from 8 K to 200 K. It is shown that, for structures with quantum well based on HgTe capacitance, conductance oscillations in the strong inversion are observed. These oscillations are related to the recharging of quantum levels in HgTe.

Keywords: nanotechnology; MIS structure; metal insulator semiconductors; HgCdTe; mercury cadmium telluride; differential conductance; CVC; capacitance-voltage characteristic; admittance; QW; quantum wells; MBE; molecular beam epitaxy; conductance oscillations.

DOI: 10.1504/IJNT.2015.067201

International Journal of Nanotechnology, 2015 Vol.12 No.3/4, pp.164 - 173

Received: 08 May 2021
Accepted: 12 May 2021

Published online: 28 Jan 2015 *

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