Differential conductance and capacity-voltage characteristics of MIS structures with single quantum wells based on HgTe
by Dmitry I. Gorn; Alexander V. Voitsekhovskii; Stanislav M. Dzyadukh; Sergey N. Nesmelov
International Journal of Nanotechnology (IJNT), Vol. 12, No. 3/4, 2015

Abstract: The paper presents research results of the admittance of metal-insulator-semiconductor (MIS) structures based on Hg_1-xCd_xTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/HgTe/HgCdTe quantum wells (QW) in the surface layer of the semiconductor structure. The thickness of a quantum well was 5.6 nm, and the composition of barrier layers with the thickness of 35 nm was close to 0.65. Measurements were conducted in the range of temperatures from 8 K to 200 K. It is shown that, for structures with quantum well based on HgTe capacitance, conductance oscillations in the strong inversion are observed. These oscillations are related to the recharging of quantum levels in HgTe.

Online publication date: Sat, 31-Jan-2015

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