Title: Doping profile optimisation in bulk FinFET channel and source/drain extension regions for low off-state leakage

Authors: Keke Zhang; Yunfei Liu; Huilong Zhu; Chao Zhao; Tianchun Ye; Haizhou Yin

Addresses: Integrated Circuit Advanced Process Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 10029, China ' Integrated Circuit Advanced Process Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 10029, China ' Integrated Circuit Advanced Process Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 10029, China ' Integrated Circuit Advanced Process Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 10029, China ' Integrated Circuit Advanced Process Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 10029, China ' Integrated Circuit Advanced Process Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 10029, China

Abstract: Sub-threshold leakage, punch-through leakage and band-to-band tunnelling (BTBT) leakage are the main components of off-state leakage in extremely scaled bulk FinFETs. By using 3-D process and device simulations, this paper studied the effects of channel and source/drain extension doping profile on these three leakage currents in bulk n-FinFETs with triangular shaped fins. Punch-through stop layer (PTSL) and source/drain extension doping profile have been carefully designed to lower the sub-threshold leakage, punch-through leakage and BTBT leakage. With the optimisation of PTSL implant and source/drain anneal conditions, the optimised n-FinFET exhibits superior short channel control, <65 mV/dec sub-threshold slope and <20 mV/V DIBL, and extremely low off-state leakage, <30 pA/um.

Keywords: 3D simulation; band-to-band tunnelling leakage; finFETs; PTSL; punch-through leakage; sub-threshold leakage; TCAD; doping profile optimisation; FETs; field effect transistors; off-state leakage; triangular fins; short channel control; sub-threshold slope.

DOI: 10.1504/IJNT.2015.066198

International Journal of Nanotechnology, 2015 Vol.12 No.1/2, pp.111 - 125

Published online: 04 Dec 2014 *

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