International Journal of Nanotechnology (IJNT)

International Journal of Nanotechnology

2015 Vol.12 No.1/2

Special Issue: 2013 International Electron Devices and Materials Symposium

Guest Editors: Dr. You-Lin Wu and Dr. Chao Sung Lai

Editorial

Pages Title and author(s)
3-10The IGZO fully transparent oxide thin film transistor on glass substrate
Cheng-I Lin; Yean-Kuen Fang; Wei-Chao Chang
DOI: 10.1504/IJNT.2015.066189
11-26Intrinsic I-V and C-V characteristics of ultra-thin oxide MOS (p) and MOS (n) structures under deep depletion
Yu-Ching Liao; Jenn-Gwo Hwu
DOI: 10.1504/IJNT.2015.066190
27-37Ultra low-temperature microwave annealing for ultra-shallow junctions and P-MOS devices
Ming-Han Tsai; Chi-Ting Wu; Shao-Yu Hu; Wen-Hsi Lee
DOI: 10.1504/IJNT.2015.066191
38-45Exploring failure mechanisms of near ultraviolet AlGaN/GaN light-emitting diodes by reverse-bias stress in water vapour
Hsiang Chen; Huan-Yu Shen; Shih-Chang Shei; Nai Chung Kang; Hung-Che Lai; Yu-Cheng Chu; Hung-Wei Chang
DOI: 10.1504/IJNT.2015.066192
46-58Fabrication of finlike thin-film transistors by solution-processed zinc oxide and nanoimprint lithography
H.J.H. Chen; S.T. Liu; S.Z. Chen
DOI: 10.1504/IJNT.2015.066193
59-73Kink effect for 28 nm n-channel field-effect transistors after decoupled plasma nitridation treatment with annealing temperatures
Shea-Jue Wang; Mu-Chun Wang; Win-Der Lee; Wen-Sheng Chen; Heng-Sheng Huang; Shuang-Yuan Chen; L.S. Huang; Chuan-Hsi Liu
DOI: 10.1504/IJNT.2015.066194
74-86Fabrication of Si and Ge vertical nanowire for transistor applications
Chia-Heng Chu; Ming-Kun Huang; Gen-Feng Wu; Chun-Lin Chu; Shu-Han Hsu; Guang-Li Luo
DOI: 10.1504/IJNT.2015.066195
87-96A Si-based bulk FinFET by novel etching process with mask-less and photoresist-free lithography technique
Min-Cheng Chen; Chih-Ming Wu; Yun-Fang Hou; Yi-Ju Chen; Chang-Hsien Lin; Chia-Yi Lin; Bo-Wei Wu; Wen-Kuan Yeh
DOI: 10.1504/IJNT.2015.066196
97-110Investigation of optical parameters of boron doped aluminium nitride films grown on diamond using spectroscopic ellipsometry
Deng Xie; Zhi Ren Qiu; Devki N. Talwar; Yi Liu; Jen-Hao Song; Jow-Lay Huang; Ting Mei; Chee Wee Liu; Zhe Chuan Fang
DOI: 10.1504/IJNT.2015.066197
111-125Doping profile optimisation in bulk FinFET channel and source/drain extension regions for low off-state leakage
Keke Zhang; Yunfei Liu; Huilong Zhu; Chao Zhao; Tianchun Ye; Haizhou Yin
DOI: 10.1504/IJNT.2015.066198
126-138Upper/lower-side random dopant fluctuation on 16-nm-gate HKMG bulk FinFET
Yiming Li; Wen-Tsung Huang; Chieh-Yang Chen; Yu-Yu Chen
DOI: 10.1504/IJNT.2015.066199

 

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