Doping profile optimisation in bulk FinFET channel and source/drain extension regions for low off-state leakage
by Keke Zhang; Yunfei Liu; Huilong Zhu; Chao Zhao; Tianchun Ye; Haizhou Yin
International Journal of Nanotechnology (IJNT), Vol. 12, No. 1/2, 2015

Abstract: Sub-threshold leakage, punch-through leakage and band-to-band tunnelling (BTBT) leakage are the main components of off-state leakage in extremely scaled bulk FinFETs. By using 3-D process and device simulations, this paper studied the effects of channel and source/drain extension doping profile on these three leakage currents in bulk n-FinFETs with triangular shaped fins. Punch-through stop layer (PTSL) and source/drain extension doping profile have been carefully designed to lower the sub-threshold leakage, punch-through leakage and BTBT leakage. With the optimisation of PTSL implant and source/drain anneal conditions, the optimised n-FinFET exhibits superior short channel control, <65 mV/dec sub-threshold slope and <20 mV/V DIBL, and extremely low off-state leakage, <30 pA/um.

Online publication date: Thu, 04-Dec-2014

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