Dislocation-free CZ-Si crystal growth without the thin Dash-neck Online publication date: Tue, 30-Nov-2004
by Xinming Huang, Toshinori Taishi, Keigo Hoshikawa
International Journal of Materials and Product Technology (IJMPT), Vol. 22, No. 1/2/3, 2005
Abstract: It is found that dislocation-free Si crystal growth is possible without a thin neck. Dislocation behaviour in a heavily B-doped CZ-Si crystal has been analysed, and it is found that three kinds of dislocations generated due to thermal shock, lattice misfit and incomplete seeding must be suppressed to grow dislocation-free crystal without the thin Dash-neck. Heavily B-doped or Ge-doped Si seeds are useful in suppressing dislocation generation due to thermal shock, and heavily B- and Ge-codoped Si seeds not only suppress dislocation generation due to thermal shock most effectively but can also suppress that due to lattice misfit. A relative higher melt temperature at the start of pulling is suggested for suppressing the dislocation generation due to incomplete seeding. Dislocations were observed in crystals grown from an annealed heavily B-doped Si seed, and they were probably induced by the dislocation loops in the annealed seed.
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