Effects of fluorine implantation on polysilicon with high-k Er₂O₃ dielectrics
by Chyuan Haur Kao; Hsuan Chi Fan; Chien Jung Liao; Shih Nan Cheng
International Journal of Nanotechnology (IJNT), Vol. 11, No. 12, 2014

Abstract: This paper reports on electrical and physical characteristics of erbium oxide (Er₂O₃) dielectric films combined with fluorine implantation on polycrystalline silicon. It was found that high-k Er₂O₃ polyoxides with fluorine implantation have lower trapping rates and higher dielectric breakdown fields than as-deposited samples. Research indicates that the fluorine ion can passivate dangling and weak Si-H bonds, forming strong Si-F bonds after adequate rapid thermal annealing and resulting in superior characteristics and improved electrical stress endurance.

Online publication date: Fri, 06-Feb-2015

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