Title: Effects of fluorine implantation on polysilicon with high-k Er2O3 dielectrics

Authors: Chyuan Haur Kao; Hsuan Chi Fan; Chien Jung Liao; Shih Nan Cheng

Addresses: Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, 333 Taiwan ' Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, 333 Taiwan ' Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, 333 Taiwan ' Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, 333 Taiwan

Abstract: This paper reports on electrical and physical characteristics of erbium oxide (Er2O3) dielectric films combined with fluorine implantation on polycrystalline silicon. It was found that high-k Er2O3 polyoxides with fluorine implantation have lower trapping rates and higher dielectric breakdown fields than as-deposited samples. Research indicates that the fluorine ion can passivate dangling and weak Si-H bonds, forming strong Si-F bonds after adequate rapid thermal annealing and resulting in superior characteristics and improved electrical stress endurance.

Keywords: fluorine implantation; polysilicon; Er2O3 dielectrics; Si-F bonds; erbium oxide; nanotechnology.

DOI: 10.1504/IJNT.2014.065137

International Journal of Nanotechnology, 2014 Vol.11 No.12, pp.1110 - 1118

Published online: 14 Oct 2014 *

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