High element integration in logical and memory matrices of neuroprocessor by applying composite memristor-diode crossbar
by A.D. Pisarev; A.N. Busygin; A.N. Bobylev; S.Yu. Udovichenko
International Journal of Nanotechnology (IJNT), Vol. 16, No. 1/2/3, 2019

Abstract: The industrial nanotechnology of fabrication of two variants of composite memristor crossbar with Zener diodes in a vacuum magnetron device and construction principles of ultra-large 3D memory and logical matrices are suggested. The topologies of the matrices with high element integration are presented.

Online publication date: Mon, 23-Sep-2019

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