Title: High element integration in logical and memory matrices of neuroprocessor by applying composite memristor-diode crossbar

Authors: A.D. Pisarev; A.N. Busygin; A.N. Bobylev; S.Yu. Udovichenko

Addresses: Research-Educational Center 'Nanotechnology', Tyumen State University, Volodarskogo st. 6, 625003, Tyumen, Russia ' Research-Educational Center 'Nanotechnology', Tyumen State University, Volodarskogo st. 6, 625003, Tyumen, Russia ' Research-Educational Center 'Nanotechnology', Tyumen State University, Volodarskogo st. 6, 625003, Tyumen, Russia ' Research-Educational Center 'Nanotechnology', Tyumen State University, Volodarskogo st. 6, 625003, Tyumen, Russia

Abstract: The industrial nanotechnology of fabrication of two variants of composite memristor crossbar with Zener diodes in a vacuum magnetron device and construction principles of ultra-large 3D memory and logical matrices are suggested. The topologies of the matrices with high element integration are presented.

Keywords: neuroprocessor; logical and memory matrices; memristor-diode crossbar.

DOI: 10.1504/IJNT.2019.102404

International Journal of Nanotechnology, 2019 Vol.16 No.1/2/3, pp.182 - 186

Published online: 23 Sep 2019 *

Full-text access for editors Full-text access for subscribers Purchase this article Comment on this article