Charge transport in hybrid solution processed heterojunction based on P3HT and ZnO from bilayer to blend Online publication date: Wed, 14-Jan-2015
by A.K. Diallo; M. Gaceur; N. Berton; I. Shupyk; G. Poize; S. Nénon; O. Margeat; C. Videlot-Ackermann; J. Ackermann
International Journal of Nanotechnology (IJNT), Vol. 11, No. 9/10/11, 2014
Abstract: Ambipolar hybrid transistors were fabricated by using inorganic zinc oxide (ZnO) nanoparticles and an organic polymer, poly(3-hexylthiophene) (P3HT), as n- and p-type semiconductors, respectively. With well-adjusted ratio between n- and p-type, an ambipolar transport was observed in thin films based on either bilayer ZnO/P3HT or blend ZnO:P3HT architectures. Morphology of solution-processed thin films was studied by scanning electron microscopy (SEM). A hybrid interface was formed by the direct contact between ZnO and P3HT leading to carrier redistribution. Such solution-processed hybrid thin-film transistors delivered in air well balanced electron and hole mobilities for both bilayer and blend architectures.
Online publication date: Wed, 14-Jan-2015
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