Title: Charge transport in hybrid solution processed heterojunction based on P3HT and ZnO from bilayer to blend

Authors: A.K. Diallo; M. Gaceur; N. Berton; I. Shupyk; G. Poize; S. Nénon; O. Margeat; C. Videlot-Ackermann; J. Ackermann

Addresses: Centre Interdisciplinaires de Nanoscience de Marseille (CINaM), Aix Marseille Université, UMR CNRS 7325, 13288 Marseille, France ' Centre Interdisciplinaires de Nanoscience de Marseille (CINaM), Aix Marseille Université, UMR CNRS 7325, 13288 Marseille, France ' Centre Interdisciplinaires de Nanoscience de Marseille (CINaM), Aix Marseille Université, UMR CNRS 7325, 13288 Marseille, France ' Centre Interdisciplinaires de Nanoscience de Marseille (CINaM), Aix Marseille Université, UMR CNRS 7325, 13288 Marseille, France ' Centre Interdisciplinaires de Nanoscience de Marseille (CINaM), Aix Marseille Université, UMR CNRS 7325, 13288 Marseille, France ' Centre Interdisciplinaires de Nanoscience de Marseille (CINaM), Aix Marseille Université, UMR CNRS 7325, 13288 Marseille, France ' Centre Interdisciplinaires de Nanoscience de Marseille (CINaM), Aix Marseille Université, UMR CNRS 7325, 13288 Marseille, France ' Centre Interdisciplinaires de Nanoscience de Marseille (CINaM), Aix Marseille Université, UMR CNRS 7325, 13288 Marseille, France ' Centre Interdisciplinaires de Nanoscience de Marseille (CINaM), Aix Marseille Université, UMR CNRS 7325, 13288 Marseille, France

Abstract: Ambipolar hybrid transistors were fabricated by using inorganic zinc oxide (ZnO) nanoparticles and an organic polymer, poly(3-hexylthiophene) (P3HT), as n- and p-type semiconductors, respectively. With well-adjusted ratio between n- and p-type, an ambipolar transport was observed in thin films based on either bilayer ZnO/P3HT or blend ZnO:P3HT architectures. Morphology of solution-processed thin films was studied by scanning electron microscopy (SEM). A hybrid interface was formed by the direct contact between ZnO and P3HT leading to carrier redistribution. Such solution-processed hybrid thin-film transistors delivered in air well balanced electron and hole mobilities for both bilayer and blend architectures.

Keywords: ZnO nanoparticles; zinc oxide; P3HT; poly(3-hexylthiophene); heterojunction; thin films; morphology; ambipolar hybrid transistors; semiconductors; thin film transistors; nanotechnology.

DOI: 10.1504/IJNT.2014.063791

International Journal of Nanotechnology, 2014 Vol.11 No.9/10/11, pp.819 - 828

Published online: 19 Jul 2014 *

Full-text access for editors Access for subscribers Purchase this article Comment on this article