Nanoscratch characteristics and interfacial adhesion energy of SiN/GaAs film/substrate bilayer systems Online publication date: Wed, 02-Jul-2014
by Anshun He; Han Huang
International Journal of Surface Science and Engineering (IJSURFSE), Vol. 7, No. 4, 2013
Abstract: Deformation characteristics and interfacial adhesion property of silicon nitride/gallium arsenide film/substrate systems were investigated by use of nanoscratch. During scratching, three different types of deformation, elastic, elastoplastic and fracture, were discovered. The critical loads for film failure were obtained. The critical loads, together with the other scratch parameters, were used to determine the interfacial adhesion energies. The practical adhesion energies per unit area of the bilayers obtained were 2.72 and 3.73 Joules/m², respectively. The tensile stress developed just behind the contact area and at the interface was attributed to the film failure. It was also found that residual compressive stress strengthened, but tensile stress weakened the interfacial adhesion.
Online publication date: Wed, 02-Jul-2014
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Surface Science and Engineering (IJSURFSE):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email firstname.lastname@example.org