Title: Nanoscratch characteristics and interfacial adhesion energy of SiN/GaAs film/substrate bilayer systems
Authors: Anshun He; Han Huang
Addresses: School of Mechanical and Mining Engineering, The University of Queensland, QLD 4072, Australia ' School of Mechanical and Mining Engineering, The University of Queensland, QLD 4072, Australia
Abstract: Deformation characteristics and interfacial adhesion property of silicon nitride/gallium arsenide film/substrate systems were investigated by use of nanoscratch. During scratching, three different types of deformation, elastic, elastoplastic and fracture, were discovered. The critical loads for film failure were obtained. The critical loads, together with the other scratch parameters, were used to determine the interfacial adhesion energies. The practical adhesion energies per unit area of the bilayers obtained were 2.72 and 3.73 Joules/m², respectively. The tensile stress developed just behind the contact area and at the interface was attributed to the film failure. It was also found that residual compressive stress strengthened, but tensile stress weakened the interfacial adhesion.
Keywords: thin films; silicon nitride; SiN; gallium arsenide; GaAs; interface adhesion; nanoscratching; nanotechnology; interfacial adhesion; deformation; substrate bilayers; critical loads; thin film failure; tensile stress; compressive stress; residual stress.
International Journal of Surface Science and Engineering, 2013 Vol.7 No.4, pp.382 - 396
Available online: 14 Nov 2013 *Full-text access for editors Access for subscribers Purchase this article Comment on this article