Bias-Enhanced Nucleation of NCD on high-adherent diamond/Ti6Al4V films Online publication date: Sat, 19-Apr-2008
by A.F. Azevedo, V.J. Trava-Airoldi, N.G. Ferreira
International Journal of Nanomanufacturing (IJNM), Vol. 2, No. 1/2, 2008
Abstract: Thin films with high nucleation of Nanocrystalline Diamond (NCD) and good adherence were deposited on Ti6Al4V alloy by microwave-assisted technique. Nucleation density of 5.0 × 109 part/cm² was achieved by using a bias voltage of -400 V applied during 5 min. Diamond films were deposited on polished and jetted substrates after bias process and showed a good quality and a total residual stress of -2.8 GPa and -1.4 GPa, respectively. Diamond/Ti6Al4V adherence was investigated as a function of substrate preparation and film growth time using Rockwell indenter with loads up to 2451 N. Films deposited on jetted substrates presented the best adhesion.
Online publication date: Sat, 19-Apr-2008
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