Bias-Enhanced Nucleation of NCD on high-adherent diamond/Ti6Al4V films
by A.F. Azevedo, V.J. Trava-Airoldi, N.G. Ferreira
International Journal of Nanomanufacturing (IJNM), Vol. 2, No. 1/2, 2008

Abstract: Thin films with high nucleation of Nanocrystalline Diamond (NCD) and good adherence were deposited on Ti6Al4V alloy by microwave-assisted technique. Nucleation density of 5.0 × 109 part/cm² was achieved by using a bias voltage of -400 V applied during 5 min. Diamond films were deposited on polished and jetted substrates after bias process and showed a good quality and a total residual stress of -2.8 GPa and -1.4 GPa, respectively. Diamond/Ti6Al4V adherence was investigated as a function of substrate preparation and film growth time using Rockwell indenter with loads up to 2451 N. Films deposited on jetted substrates presented the best adhesion.

Online publication date: Sat, 19-Apr-2008

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanomanufacturing (IJNM):
Login with your Inderscience username and password:

    Username:        Password:         

Forgotten your password?


Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com