Title: Analysis and modelling of the role of temperature in the static forward characteristics of an IGBT

Authors: Layachi Boussouar; Hervé Morel; Bruno Allard; Cyril Buttay

Addresses: Université Ferhat Abas, Sétif, Algerie, Lab. MPA, IOMP, Algeria; Université de Lyon, INSA Lyon, CNRS, Lab. Ampère, France ' Université de Lyon, INSA Lyon, CNRS, Lab. Ampère, France ' Université de Lyon, INSA Lyon, CNRS, Lab. Ampère, France ' Université de Lyon, INSA Lyon, CNRS, Lab. Ampère, France

Abstract: To effectively simulate the electrical characteristics of an IGBT, it is necessary to have a good model for applications operating in a wide range of temperatures. A new model of the on-state forward characteristics of an IGBT was developed and validated in MAST language in static mode using the SABER simulator. A particular attention was given to temperature dependence, based on the physical analysis of semiconductor device regions and the use of local and physic-based relations. The model was compared to experimental results and to the standard Hefner model. The validation of the model shows a good agreement between measurements and simulation. A clear improvement in the accuracy of the on state characteristic temperature dependence obtained.

Keywords: insulated-gate bipolar transistor; IGBT; MOSFET; modelling; power semiconductor devices; power transistors and simulation.

DOI: 10.1504/IJPELEC.2019.099337

International Journal of Power Electronics, 2019 Vol.10 No.3, pp.187 - 211

Received: 08 Jan 2017
Accepted: 15 May 2017
Published online: 29 Apr 2019 *

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