Analysis and modelling of the role of temperature in the static forward characteristics of an IGBT
by Layachi Boussouar; Hervé Morel; Bruno Allard; Cyril Buttay
International Journal of Power Electronics (IJPELEC), Vol. 10, No. 3, 2019

Abstract: To effectively simulate the electrical characteristics of an IGBT, it is necessary to have a good model for applications operating in a wide range of temperatures. A new model of the on-state forward characteristics of an IGBT was developed and validated in MAST language in static mode using the SABER simulator. A particular attention was given to temperature dependence, based on the physical analysis of semiconductor device regions and the use of local and physic-based relations. The model was compared to experimental results and to the standard Hefner model. The validation of the model shows a good agreement between measurements and simulation. A clear improvement in the accuracy of the on state characteristic temperature dependence obtained.

Online publication date: Mon, 29-Apr-2019

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