Article: Investigation of electrical transport properties in heterojunctions comprised of silicon substrate and nanocrystalline iron disilicide films Journal: International Journal of Nanotechnology (IJNT) 2016 Vol.13 No.10/11/12 pp.903 - 912 Abstract: In this study, n-type nanocrystalline FeSi<SUB align="right"><SMALL>2</SMALL></SUB>/p-type Si heterojunctions were fabricated using facing-target direct-current sputtering (FTDCS). The possible transportation mechanisms of carriers were investigated by analysing the dark J-V characteristics at temperatures ranging between 60 and 300 K. The ideality factor (n) was estimated from the slope of the linear region for the forward lnJ-V characteristics. The value of n was 1.87 at 300 K and nearly constant at temperatures ranging from 140 to 300 K, suggesting that a recombination process at the junction interface was dominant in the transportation mechanism of carriers. At temperatures below 140 K, the value of n increased by more than two and the value of A was virtually constant. Owing to the consistency of A, combined with the temperature dependent value of n, the implication is that a trap-assisted multi-step tunnelling mechanism governed the carrier transport. From the analysis of J-V characteristics, the value of barrier height was 0.58 eV at 300 K and decreased to 0.19 eV at 60 K. Inderscience Publishers - linking academia, business and industry through research

Title: Investigation of electrical transport properties in heterojunctions comprised of silicon substrate and nanocrystalline iron disilicide films

Authors: Nathaporn Promros; Phongsaphak Sittimart; Weerasaruth Kaenrai

Addresses: Department of Physics, Faculty of Science, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, Thailand ' Department of Physics, Faculty of Science, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, Thailand ' Department of Physics, Faculty of Science, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, Thailand

Abstract: In this study, n-type nanocrystalline FeSi₂/p-type Si heterojunctions were fabricated using facing-target direct-current sputtering (FTDCS). The possible transportation mechanisms of carriers were investigated by analysing the dark J-V characteristics at temperatures ranging between 60 and 300 K. The ideality factor (n) was estimated from the slope of the linear region for the forward lnJ-V characteristics. The value of n was 1.87 at 300 K and nearly constant at temperatures ranging from 140 to 300 K, suggesting that a recombination process at the junction interface was dominant in the transportation mechanism of carriers. At temperatures below 140 K, the value of n increased by more than two and the value of A was virtually constant. Owing to the consistency of A, combined with the temperature dependent value of n, the implication is that a trap-assisted multi-step tunnelling mechanism governed the carrier transport. From the analysis of J-V characteristics, the value of barrier height was 0.58 eV at 300 K and decreased to 0.19 eV at 60 K.

Keywords: nanocrystalline FeSi2; heterojunctions; FTDCS; J-V characteristic; transportation mechanism; electrical transport properties; silicon substrate; iron disilicide films; nanotechnology.

DOI: 10.1504/IJNT.2016.080368

International Journal of Nanotechnology, 2016 Vol.13 No.10/11/12, pp.903 - 912

Published online: 16 Nov 2016 *

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Title: Investigation of electrical transport properties in heterojunctions comprised of silicon substrate and nanocrystalline iron disilicide films

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