Title: Bipolar resistive switching properties of Cu-CuO-InGaZnO-AZO multilayer structure thin film

Authors: Yifeng Deng; Chunfu Li; Min Wei; Hong Deng; Yuzhong Chen

Addresses: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China ' School of Aeronautics and Astronautics, University of Electronic Science and Technology of China, Chengdu610054, Sichuan, China ' State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China ' State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China ' State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Abstract: A multilayer structure (Cu/CuO/InGaZO/AZO) resistive switching based on multi-component metal oxide is proposed and demonstrated. Al doped ZnO (AZO) thin film prepared on quartz substrate was chosen to be a bottom electrode owing to its high transparency and conductivity, then an InGaZnO (IGZO) thin film with high electronic mobility and ductility was grown on the substrate acting as a dielectric layer. We designed a CuO layer to be an electronic buffer layer between IGZO and top Cu electrode, which can play a critical role in increasing the On/Off current ratio. All of these four layers were prepared by RF magnetron sputtering at a low temperature of 200°C. Test results indicate that Cu/CuO/IGZO/AZO switching devices have about 102 on/off current ratio, (3.8∼4 V)/(−4∼−3.6 V) set/reset threshold voltage, and over 103 cycles anti-fatigue properties.

Keywords: resistive switching; CuO; IGZO; AZO; multilayer structure thin films; multi-component metal oxide; aluminium doped ZnO; zinc oxide; quartz substrate; indium gallium ZnO; InGa; copper oxide; cupric oxide; switching devices; on-off current ratio; set-reset threshold voltage; anti-fatigue properties.

DOI: 10.1504/IJNT.2016.080366

International Journal of Nanotechnology, 2016 Vol.13 No.10/11/12, pp.913 - 922

Published online: 16 Nov 2016 *

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