Bipolar resistive switching properties of Cu-CuO-InGaZnO-AZO multilayer structure thin film
by Yifeng Deng; Chunfu Li; Min Wei; Hong Deng; Yuzhong Chen
International Journal of Nanotechnology (IJNT), Vol. 13, No. 10/11/12, 2016

Abstract: A multilayer structure (Cu/CuO/InGaZO/AZO) resistive switching based on multi-component metal oxide is proposed and demonstrated. Al doped ZnO (AZO) thin film prepared on quartz substrate was chosen to be a bottom electrode owing to its high transparency and conductivity, then an InGaZnO (IGZO) thin film with high electronic mobility and ductility was grown on the substrate acting as a dielectric layer. We designed a CuO layer to be an electronic buffer layer between IGZO and top Cu electrode, which can play a critical role in increasing the On/Off current ratio. All of these four layers were prepared by RF magnetron sputtering at a low temperature of 200°C. Test results indicate that Cu/CuO/IGZO/AZO switching devices have about 10² on/off current ratio, (3.8∼4 V)/(−4∼−3.6 V) set/reset threshold voltage, and over 10³ cycles anti-fatigue properties.

Online publication date: Wed, 16-Nov-2016

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