Title: Review of inorganic semiconductor based ultraviolet photodetectors with high internal gain and fast recovery speed

Authors: Fanrong Lin; Leixin Meng

Addresses: Lanzhou University, 222 South Tianshui Road, Lanzhou, Gansu 730000, China ' Lanzhou University, 222 South Tianshui Road, Lanzhou, Gansu 730000, China

Abstract: Ultraviolet (UV) photodetectors have important applications in military field, industrial field, environmental field, etc. High performance UV photodetectors characterised as high internal gain (G) and high recovery speed has been studied in decades. In this article, we provide a comprehensive review about recent works on increasing the internal gain of UV photodetectors by improving device configuration, optimising the diameter of the nanowire, applying surface functionalisation and Schottky contact. And the possible solutions to the persistent photoconductivity (PPC) problem which prolongs the recovery time are also discussed.

Keywords: ultraviolet photodetectors; UV photodetectors; internal gain; photo response; recovery time; metal oxide; persistent photoconductivity; sensitivity; inorganic semiconductors; recovery speed.

DOI: 10.1504/IJNM.2016.079222

International Journal of Nanomanufacturing, 2016 Vol.12 No.3/4, pp.320 - 335

Available online: 20 Sep 2016 *

Full-text access for editors Access for subscribers Purchase this article Comment on this article