Title: Fabrication of pin diodes using direct-bonded silicon wafers

Authors: Iqbal K. Bansal, Mark Surgent

Addresses: M/A-Com, A Tyco Electronics Company, IPBU – Integrated Products Business Unit, 43 South Avenue, Burlington MA 01803, USA. ' M/A-Com, A Tyco Electronics Company, IPBU – Integrated Products Business Unit, 43 South Avenue, Burlington MA 01803, USA

Abstract: Direct wafer bonding is an operation of ultra-fine alignment, joining and thermal bonding of two silicon wafers. The silicon wafers are chemically cleaned in order to minimise surface contamination. The wafer surface is either |hydrophilic| or |hydrophobic|. The |hydrophobic| surface is achieved using an in-situ oxide etching process. The joining step is performed in a Class 100 or better environment by employing a semi-automatic joiner. Then, thermal bonding operation is carried out at elevated temperatures. Detailed product yield data are presented. The application of silicon-direct wafer bonded substrates provides a quantum jump in the device electrical performance of PIN diodes.

Keywords: direct wafer bonding; hydrophilic; hydrophobic; light point defects; voids; pin diodes; silicon wafers; semiconductor manufacturing; oxide etching; joining; thermal bonding; ultra-fine alignment; electrical performance; MEMS; microelectromechanical systems.

DOI: 10.1504/IJMTM.2005.007703

International Journal of Manufacturing Technology and Management, 2005 Vol.7 No.5/6, pp.553 - 565

Published online: 02 Sep 2005 *

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