Title: Study on geometry of silicon PIN radiation detector for breakdown voltage improvement

Authors: Hong-zhi Liu; Min Yu; Bao-hua Shi; Lin Qi; Shao-nan Wang; An-qi Hu; Hong Du; Jin-yan Wang; Yu-feng Jin; Bing Yang

Addresses: National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory of Microelectronic Devices and Circuits, Peking University, Beijing 100871, China ' National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory of Microelectronic Devices and Circuits, Peking University, Beijing 100871, China ' National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory of Microelectronic Devices and Circuits, Peking University, Beijing 100871, China ' National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory of Microelectronic Devices and Circuits, Peking University, Beijing 100871, China ' National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory of Microelectronic Devices and Circuits, Peking University, Beijing 100871, China ' National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory of Microelectronic Devices and Circuits, Peking University, Beijing 100871, China ' National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory of Microelectronic Devices and Circuits, Peking University, Beijing 100871, China ' National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory of Microelectronic Devices and Circuits, Peking University, Beijing 100871, China ' National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory of Microelectronic Devices and Circuits, Peking University, Beijing 100871, China ' Department of Microelectronics, College of Information Engineering, North China University of Technology, Beijing 100144, China

Abstract: The silicon PIN radiation detectors are always used under high working voltages. The breakdown voltage improvement has been researched in this paper. The resistivity of the silicon is larger than 20,000 Ω cm and the thickness is 1 mm. The field plate and field-limiting ring as well as round corners are applied for comprehensive improvement. The impact of field limiting ring distance to the main junction is tested by varying the ring distance from 30 μm to 260 μm. The simulation research on ring distance is carried out. The round corner radius is researched by varying the radius from 30 μm to 500 μm.

Keywords: PIN radiation detectors; field limiting ring; simulation; round corner radius; breakdown voltage; geometry; silicon detectors; ring distance.

DOI: 10.1504/IJNT.2015.071786

International Journal of Nanotechnology, 2015 Vol.12 No.10/11/12, pp.753 - 760

Published online: 18 Sep 2015 *

Full-text access for editors Access for subscribers Purchase this article Comment on this article