Title: Modelling of multipurpose spintronic devices

Authors: Thomas Windbacher; Joydeep Ghosh; Alexander Makarov; Viktor Sverdlov; Siegfried Selberherr

Addresses: Institute for Microelectronics, TU Wien, Gußhausstraße 27–29/E360, A-1040 Vienna, Austria ' Institute for Microelectronics, TU Wien, Gußhausstraße 27–29/E360, A-1040 Vienna, Austria ' Institute for Microelectronics, TU Wien, Gußhausstraße 27–29/E360, A-1040 Vienna, Austria ' Institute for Microelectronics, TU Wien, Gußhausstraße 27–29/E360, A-1040 Vienna, Austria ' Institute for Microelectronics, TU Wien, Gußhausstraße 27–29/E360, A-1040 Vienna, Austria

Abstract: Modelling of spin transport and spin dynamics, as a prerequisite for designing spintronic devices, is considered. Spin injection into a semiconductor under charge depletion, charge neutrality, and charge accumulation is investigated. The existence of a maximum spin current density in the bulk at a large spin current density at the interface in charge accumulation is related to the spin current at the charge neutrality condition. Then, a novel multipurpose spintronic device is proposed and its structure as well as its working principle is explained. Two important applications for this structure, a flip flop and a nano-scale oscillator, are further elucidated and the properties related to these applications are investigated.

Keywords: spin drift diffusion; spin injection; spin transport; spin dynamics; spin threshold current; spin transfer torque; flip flop; latch; bias-field free nano-oscillators; multipurpose spintronic devices; large scale integration; nanotechnology; spintronics; modelling; semiconductors; charge depletion; charge neutrality; charge accumulation.

DOI: 10.1504/IJNT.2015.067215

International Journal of Nanotechnology, 2015 Vol.12 No.3/4, pp.313 - 331

Received: 08 May 2021
Accepted: 12 May 2021

Published online: 28 Jan 2015 *

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