Title: Investigation of Ge/Si quantum dot structures using the methods of admittance spectroscopy

Authors: Vadim G. Satdarov; Alexander V. Voitsekhovskii; Andrey P. Kokhanenko; Kirill A. Lozovoy

Addresses: Department of Quantum Electronics and Photonics, National Research Tomsk State University, 36 Lenin av., Tomsk, 634050, Russian Federation ' Department of Quantum Electronics and Photonics, National Research Tomsk State University, 36 Lenin av., Tomsk, 634050, Russian Federation ' Department of Quantum Electronics and Photonics, National Research Tomsk State University, 36 Lenin av., Tomsk, 634050, Russian Federation ' Department of Quantum Electronics and Photonics, National Research Tomsk State University, 36 Lenin av., Tomsk, 634050, Russian Federation

Abstract: In this paper the properties of multilayer p-i-n-structures based on Si with Ge quantum dots fabricated by molecular beam epitaxy were investigated using the method of admittance spectroscopy at temperatures from 10 K to 300 K. The results of experimental research for two types of structures are presented. The activation energies of the emission process from localised states are calculated.

Keywords: admittance spectroscopy; germanium; silicon; quantum dots; QDs; multi-layer structures; solar cells; molecular beam epitaxy; MBE; nanotechnology.

DOI: 10.1504/IJNT.2015.067213

International Journal of Nanotechnology, 2015 Vol.12 No.3/4, pp.285 - 296

Received: 08 May 2021
Accepted: 12 May 2021

Published online: 28 Jan 2015 *

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