Title: Determination of the mechanism behind the organic magnetoresistance (OMAR) effect by using impedance spectroscopy

Authors: Marine Fayolle; Mariko Yamaguchi; Song Toan Pham; Tatsuhiko Ohto; Hirokazu Tada

Addresses: Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka, Japan ' Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka, Japan ' Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka, Japan ' Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka, Japan ' Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka, Japan

Abstract: We investigated the organic magnetoresistance (OMAR) mechanism in poly(3-hexylthiophene-2,5-diyl) (P3HT)-based diodes, by using impedance spectroscopy. We have prepared layered structures consisting of indium tin oxide, poly(3,4-ethylenedioxythiophene):poly(styrenesulphonate) (PEDOT:PSS), P3HT and aluminium and measured the bias voltage dependence of the OMAR and of the impedance spectra. The capacitance deduced from the impedance data indicated that the OMAR was explained by the single-carrier (bipolaron) model at lower bias voltages as well as double-carrier models at higher bias voltages. The impedance response also suggested that the OMAR from the single-carrier model was governed by the PEDOT:PSS/P3HT interface whereas the double-carrier OMAR was mainly related to the P3HT layer.

Keywords: organic magnetoresistance; impedance spectroscopy; magnetic field effect; organic semiconductors; organic diodes.

DOI: 10.1504/IJNT.2015.067209

International Journal of Nanotechnology, 2015 Vol.12 No.3/4, pp.238 - 247

Received: 08 May 2021
Accepted: 12 May 2021

Published online: 28 Jan 2015 *

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