Title: Photodetectors and solar cells with Ge/Si quantum dots parameters dependence on growth conditions

Authors: Kirill A. Lozovoy; Alexander V. Voitsekhovskii; Andrey P. Kokhanenko; Vadim G. Satdarov

Addresses: Department of Quantum Electronics and Photonics, National Research Tomsk State University, 36 Lenin av., Tomsk, 634050, Russian Federation ' Department of Quantum Electronics and Photonics, National Research Tomsk State University, 36 Lenin av., Tomsk, 634050, Russian Federation ' Department of Quantum Electronics and Photonics, National Research Tomsk State University, 36 Lenin av., Tomsk, 634050, Russian Federation ' Department of Quantum Electronics and Photonics, National Research Tomsk State University, 36 Lenin av., Tomsk, 634050, Russian Federation

Abstract: In this paper recommendations for growth conditions necessary for achieving maximum detectivity of infrared photodetectors with quantum dots and efficiency of quantum dot solar cells are given. It is also shown that for improvement of photodetectors characteristics quantum dots should be grown at rather high temperatures, and, on the contrary, at relatively low temperatures for maximisation of solar cells efficiency.

Keywords: infrared photodetectors; detectivity; solar cells; efficiency; germanium; silicon; multi-layer structures; molecular beam epitaxy; MBE; quantum dots; QDs; nanotechnology; growth conditions; temperature.

DOI: 10.1504/IJNT.2015.067206

International Journal of Nanotechnology, 2015 Vol.12 No.3/4, pp.209 - 217

Received: 08 May 2021
Accepted: 12 May 2021

Published online: 28 Jan 2015 *

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