Title: Upper/lower-side random dopant fluctuation on 16-nm-gate HKMG bulk FinFET
Authors: Yiming Li; Wen-Tsung Huang; Chieh-Yang Chen; Yu-Yu Chen
Addresses: Parallel and Scientific Computing Laboratory, Department of Electrical and Computer Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan ' Parallel and Scientific Computing Laboratory, Department of Electrical and Computer Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan ' Parallel and Scientific Computing Laboratory, Department of Electrical and Computer Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan ' Parallel and Scientific Computing Laboratory, Department of Electrical and Computer Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan
Abstract: In this work, we for the first time classify dopants that exist near the source/drain side or the upper/lower side of silicon fin and explore the impact of random dopants' (RDs) position on devices' DC characteristic. The effects of random dopant fluctuation (RDF) on the performance of 16-nm-gate HKMG bulk FinFET are studied by using experimentally validated three-dimensional RDF device simulation. The dopants near the source side or the upper fin would induce large barrier for electrons, so the threshold voltage (Vth) will be increased in n-type HKMG bulk FinFET devices which have more dopants on the source side or the upper fin. In addition, the upper-fin's dopants are discovered to have larger influence on the profile of energy band. Moreover, the issue about Vth's fluctuation on both the planar MOSFET and the bulk FinFETs with different aspect ratios (AR) is studied. The higher-AR HKMG bulk FinFET devices have relatively smaller Vth's variation induced by RDF.
Keywords: bulk finFETs; random dopant fluctuation; RDF; upper-side fins; lower-side fins; random position effect; characteristic fluctuation; FETs; field effect transistors; silicon fins.
International Journal of Nanotechnology, 2015 Vol.12 No.1/2, pp.126 - 138
Published online: 04 Dec 2014 *
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