Title: Investigation of optical parameters of boron doped aluminium nitride films grown on diamond using spectroscopic ellipsometry

Authors: Deng Xie; Zhi Ren Qiu; Devki N. Talwar; Yi Liu; Jen-Hao Song; Jow-Lay Huang; Ting Mei; Chee Wee Liu; Zhe Chuan Fang

Addresses: Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631, China; Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei 106-17, Taiwan ' State Key Laboratory of Optoelectronic Materials and Technologies and School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China ' Department of Physics, Indiana University of Pennsylvania, 56 Weyandt Hall, Indiana, 975 Oakland Avenue, PA 15705, USA ' College of Physics Science and Technology, Shenzhen University, Shenzhen 518060, China ' Department of Materials Science and Engineering, National Cheng-Kung University, Tainan 701, Taiwan ' Department of Materials Science and Engineering, National Cheng-Kung University, Tainan 701, Taiwan ' The Key Laboratory of Space Applied Physics and Chemistry, Ministry of Education and Shaanxi Key Laboratory of Optical Information Technology, School of Science, Northwestern Polytechnical University, Xi'an 710072, China ' Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei, 106-17, Taiwan ' Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei, 106-17, Taiwan

Abstract: Boron doped aluminium nitride (B)AlN films are prepared on diamond substrate by using a co-sputtering system. The dielectric function of diamond substrate and (B)AlN films with B contents of 0%, 3%, 5% are extracted by using the spectroscopic ellipsometry. Whereas the (B)AlN films having B contents lower than 5% are considered important for improving crystalline and electronic properties of the buffer layers - the films with B contents ≤3%, however, do not cause appreciable changes in its direct bandgaps.

Keywords: BAlN film; boron aluminium nitride; co-sputtering; dielectric function; spectroscopic ellipsometry; diamond substrate; optical parameters.

DOI: 10.1504/IJNT.2015.066197

International Journal of Nanotechnology, 2015 Vol.12 No.1/2, pp.97 - 110

Published online: 04 Dec 2014 *

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