Title: In situ indium-induced crystallisation of low temperature nano-poly silicon (LTNPS) thin film on ITO glass substrate
Authors: Feng-Renn Juang; Yean-Kuen Fang; Yong-Jie Zhong
Addresses: Department of Electrical Engineering, National Sun Yat-sen University, No.70, Lienhai Rd., Kaohsiung 80424, Taiwan ' VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No.1, University Rd., Tainan 70101, Taiwan ' VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No.1, University Rd., Tainan 70101, Taiwan
Abstract: For the first time, the low temperature nano-poly silicon (LTNPS) thin films were formed on indium tin oxide (ITO) glass with a temperature of ∼200ºC using the in situ indium-induced crystallisation of the plasma enhanced CVD (PECVD) deposited a-Si. Compared with the conventional method for transfer of the PECVD formed amorphous structure to the nano-poly one, the technology features a low temperature operation, and without an extra high temperature (300ºC) post-deposition annealing (PDA). Thus the LTNPS can be applied for solar cell or thin film transistor in flexible substrates pre-coated by ITO film. We used SEM, XRD and Raman to characterise the deposited films, and interpret the growing mechanisms in details.
Keywords: AZO; ITO; MIC; nano-poly silicon; PECVD; plasma enhanced CVD; PDA; XRD; SEM; indium tin oxide; crystallisation; low temperature NPS; LTNPS thin films; glass substrate; solar cells; thin film transistors.
International Journal of Nanotechnology, 2014 Vol.11 No.12, pp.1056 - 1062
Published online: 14 Oct 2014 *Full-text access for editors Access for subscribers Purchase this article Comment on this article