In situ indium-induced crystallisation of low temperature nano-poly silicon (LTNPS) thin film on ITO glass substrate Online publication date: Fri, 06-Feb-2015
by Feng-Renn Juang; Yean-Kuen Fang; Yong-Jie Zhong
International Journal of Nanotechnology (IJNT), Vol. 11, No. 12, 2014
Abstract: For the first time, the low temperature nano-poly silicon (LTNPS) thin films were formed on indium tin oxide (ITO) glass with a temperature of ∼200ºC using the in situ indium-induced crystallisation of the plasma enhanced CVD (PECVD) deposited a-Si. Compared with the conventional method for transfer of the PECVD formed amorphous structure to the nano-poly one, the technology features a low temperature operation, and without an extra high temperature (300ºC) post-deposition annealing (PDA). Thus the LTNPS can be applied for solar cell or thin film transistor in flexible substrates pre-coated by ITO film. We used SEM, XRD and Raman to characterise the deposited films, and interpret the growing mechanisms in details.
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