Title: Simulation and performance analysis of superstrate Cu(In,Ga)Se2 solar cells using nanostructured Zn1−xVxO thin films

Authors: Kamal Djessas; Idris Bouchama; Kahina Medjnoun; Abdesselam Bouloufa

Addresses: Processes, Materials and Solar Energy Laboratory (PROMES/CNRS), Rambla de la Thermodynamique, Technosud, Perpignan 66100, France; University of Perpignan Via Domitia (UPVD), 52 avenue Paul Alduy, Perpignan 68860, France ' Faculty of Technology, Electrical Department, Msila University, 28000, Algeria; Electrochemical and Materials Laboratory, Ferhat Abbas University of Setif, 19000, Algeria ' Processes, Materials and Solar Energy Laboratory (PROMES/CNRS), Rambla de la Thermodynamique, Technosud, Perpignan 66100, France; University of Perpignan Via Domitia (UPVD), 52 avenue Paul Alduy, Perpignan 68860, France; Advanced Technologies Laboratory of Electrical Engineering, Mouloud Mammari University of Tizi Ouzou, 15000, Algeria ' Electrochemical and Materials Laboratory, Ferhat Abbas University of Setif, 19000, Algeria

Abstract: In this paper, we describe in the first step the structural, electrical and optical properties of the nanostructured Zn1−xVxO thin films deposited on glass substrates by rf-magnetron sputtering using aerogel nanoparticles synthesised by the sol-gel method. The best properties, satisfying the role of window and buffer layers, were achieved, respectively, for the films of Zn0.99V0.01O elaborated at room temperature and Zn0.80V0.20O at 200°C. In the second step, the nanostructured Zn0.99V0.01O and Zn0.80V0.20O layers are, respectively, proposed as alternative to the traditional (ITO) window and (CdS) buffer layers and tested numerically in Cu(In,Ga)Se2 (CIGS) solar cell using one-dimensional AMPS-1D device simulator. The influence of physical and geometrical parameters of the p-type CIGS absorber layer on the performance of the superstrate SLG/(n+)Zn0.99V0.01O/(n)Zn0.80V0.20O/(p)Cu(In,Ga)Se2/Mo solar cell was investigated. The calculations assume fixed Zn1−xVxO input parameters. The carrier concentration and thickness of the absorber layer were found to be a key factor, affecting the solar cell performance. On the basis of the simulation results, a short-circuit current density of about 33 mA/cm2 has been obtained for 4 μm-CIGS solar cell using n-type Zn0.80V0.20O buffer layer for 100 nm thick. It is also found that a conversion efficiency of more than 19% AM 1.5 G could be expected for more than 3 μm absorber thickness and acceptor concentration varying between 2 × 1016 and 1017 cm−3. From the results obtained, we suggest the use of Zn0.80V0.20O and Zn0.99V0.01O as a buffer and window layers, respectively, to achieve high-efficiency CIGS solar cells with better photovoltaic parameters.

Keywords: superstrate structure; solar cells; Cu(In,Ga)Se2; copper indium gallium diselenide; nanostructures; nanotechnology; Zn1-xVxO; thin films; aerogel nanoparticles; photovoltaic parameters.

DOI: 10.1504/IJNT.2014.063794

International Journal of Nanotechnology, 2014 Vol.11 No.9/10/11, pp.854 - 868

Published online: 20 Jul 2014 *

Full-text access for editors Access for subscribers Purchase this article Comment on this article