Title: Investigation of bipolar resistive switching characteristics in Si3N4-based RRAM with metal-insulator-silicon structure

Authors: Sungjun Kim; Sunghun Jung; Byung-Gook Park

Addresses: Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul, 151-742, South Korea ' Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul, 151-742, South Korea ' Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul, 151-742, South Korea

Abstract: Fab-friendly Ti/Si3N4/p+-Si stacked RRAM device was fabricated. Reproducible bipolar switching occurs under a reasonable operation voltage (<3 V) owing to forming-less process. In addition, self-compliance less than 1 mA is helpful for a circuit design. For high density, the feasibility of multi-level cell (MLC) operation is demonstrated using gradual set/reset during resistance transition.

Keywords: Si3N4; silicon nitride; RRAM; resistive RAM; random access memory; MIS structure; metal insulator silicon; forming-less; self-compliance; multi-level cell; nanoelectronics; nanotechnology; bipolar resistive switching.

DOI: 10.1504/IJNT.2014.059816

International Journal of Nanotechnology, 2014 Vol.11 No.1/2/3/4, pp.126 - 134

Available online: 13 Mar 2014 *

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