Investigation of bipolar resistive switching characteristics in Si3N4-based RRAM with metal-insulator-silicon structure Online publication date: Sat, 15-Nov-2014
by Sungjun Kim; Sunghun Jung; Byung-Gook Park
International Journal of Nanotechnology (IJNT), Vol. 11, No. 1/2/3/4, 2014
Abstract: Fab-friendly Ti/Si3N4/p+-Si stacked RRAM device was fabricated. Reproducible bipolar switching occurs under a reasonable operation voltage (<3 V) owing to forming-less process. In addition, self-compliance less than 1 mA is helpful for a circuit design. For high density, the feasibility of multi-level cell (MLC) operation is demonstrated using gradual set/reset during resistance transition.
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