Article: Homogeneity of Ge1-xSix alloys (x≤0.30) grown by the travelling solvent method Journal: International Journal of Materials and Product Technology (IJMPT) 2005 Vol.22 No.1/2/3 pp.105 - 121 Abstract: Crystal growth of Ge1-xSix alloy with [Si] composition ranging from 1 to 30 at.%. using the travelling solvent method (TSM) is presented. Single crystal growth was obtained using a Ge seed crystal. The fluctuations in chemical composition along and transverse to the Ge1-xSix samples were typically less than ±0.4 and 0.3 at.%, respectively. The macroscopic composition inhomogeneities along the growth axis in the TSM grown samples correlate strongly with those within the Ge1-xSix feedrods which in turn depend markedly on the quenching rate of the molten alloy. Hall effect measurements indicate that there is a conductivity type reversal in the samples from n to p type with Si composition above 1 at.% in the alloy. Inderscience Publishers - linking academia, business and industry through research

Title: Homogeneity of Ge_1-xSi_x alloys (x≤0.30) grown by the travelling solvent method

Authors: D. Labrie, A.E. George, M. Jamieson, S. Obruchkov, J.P. Healey, B.E. Paton, M.Z. Saghir

Addresses: Department of Physics and Atmospheric Sciences, Dalhousie University, Halifax, Nova Scotia, B3H 3J5, Canada. ' Department of Physics and Atmospheric Sciences, Dalhousie University, Halifax, Nova Scotia, B3H 3J5, Canada. ' Department of Physics and Atmospheric Sciences, Dalhousie University, Halifax, Nova Scotia, B3H 3J5, Canada. ' Department of Physics and Atmospheric Sciences, Dalhousie University, Halifax, Nova Scotia, B3H 3J5, Canada. ' Department of Physics and Atmospheric Sciences, Dalhousie University, Halifax, Nova Scotia, B3H 3J5, Canada. ' Department of Physics and Atmospheric Sciences, Dalhousie University, Halifax, Nova Scotia, B3H 3J5, Canada. ' Department of Mechanical Engineering, Ryerson University, Toronto, Ontario, M5B 2K3, Canada

Abstract: Crystal growth of Ge_1-xSi_x alloy with [Si] composition ranging from 1 to 30 at.%. using the travelling solvent method (TSM) is presented. Single crystal growth was obtained using a Ge seed crystal. The fluctuations in chemical composition along and transverse to the Ge1-xSix samples were typically less than ±0.4 and 0.3 at.%, respectively. The macroscopic composition inhomogeneities along the growth axis in the TSM grown samples correlate strongly with those within the Ge_1-xSi_x feedrods which in turn depend markedly on the quenching rate of the molten alloy. Hall effect measurements indicate that there is a conductivity type reversal in the samples from n to p type with Si composition above 1 at.% in the alloy.

Keywords: germanium silicon alloys; growth from melt; Hall effect; travelling heater method; travelling solvent method; crystal growth.

DOI: 10.1504/IJMPT.2005.005751

International Journal of Materials and Product Technology, 2005 Vol.22 No.1/2/3, pp.105 - 121

Published online: 30 Nov 2004 *

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Title: Homogeneity of Ge1-xSix alloys (x≤0.30) grown by the travelling solvent method

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Title: Homogeneity of Ge_1-xSi_x alloys (x≤0.30) grown by the travelling solvent method