Title: Microstructure and opto-electrical properties of SnO2:In2O3 alloys thin films prepared by ultrasonic spray

Authors: Fayssal Ynineb; Abdelkader Hafdallah; Nadhir Attaf; Mohammed Salah Aida; Jamal Bougdira; Hervé Rinnert

Addresses: LCMI, Department of Physics, University of Mentouri Constantine, 25000, Algeria ' LCMI, Department of Physics, University of Mentouri Constantine, 25000, Algeria ' LCMI, Department of Physics, University of Mentouri Constantine, 25000, Algeria ' LCMI, Department of Physics, University of Mentouri Constantine, 25000, Algeria ' Institute Jean Lamour UMR 7198, University of Lorraine, Vandoeuvre, 54506, France ' Institute Jean Lamour UMR 7198, University of Lorraine, Vandoeuvre, 54506, France

Abstract: In this work, we study the effect of indium weight ratio in solution: R = [In/Sn] on the properties of SnO2:In2O3 thin films prepared by ultrasonic spray method at fixed temperature of 300°C. The used precursors are tin chloride dehydrate and indium trichloride dissolved in methanol. To prepare hybrid SnO2:In2O3 thin films with different concentrations, the ratio R is varied in the range of 10-95 wt%. The resulting films were characterised by X-ray diffraction, scanning electron microscopy analysis, UV-visible spectrophotometer and conductivity measurement. The XRD results indicate segregation between SnO2 and In2O3 phases in all films. The optical transmittance is in the range of [75-85]%. The conductivity values of pure oxides are very low [∼10−3 (Φ.cm)−1] and it is increased with R ratio until a maximum value of 1.2 × 102 (Φ.cm)−1 obtained at R = 95 wt%. Consequently, the higher figure of merit (Fm = σ.T.d) is obtained at this later ratio.

Keywords: transparent conductive oxides; TCO thin films; ultrasonic spray; SnO2; tin oxide; In2O3; indium oxide; alloys; figure of merit.

DOI: 10.1504/IJNP.2013.055001

International Journal of Nanoparticles, 2013 Vol.6 No.2/3, pp.252 - 263

Published online: 21 Jun 2013 *

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