Title: Physical modelling of carbon nanotube field effect transistor

Authors: Rebiha Marki; Chérifa Azizi

Addresses: Laboratoire composants actifs et matériaux, Département sciences de la matière, Faculté des sciences exactes et des sciences de la nature et de la vie, Université Larbi Ben M'Hidi, BP. 102, 41000 Souk Ahras, Algérie ' Laboratoire composants actifs et matériaux, Département sciences de la matière, Faculté des sciences exactes et des sciences de la nature et de la vie, Université Larbi Ben M'Hidi, BP. 102, 41000 Souk Ahras, Algérie

Abstract: This work presents a model for the Schottky barrier (SB) carbon nanotube field effect transistor (CNTFET), where the source and the drain electrodes contacts are characterised following a model showing the formation of SBs at the metal electrode-nanotube interface and having a direct influence on the CNTFET transport properties. We have studied the influence of the material parameters, such as the height of the SB (ΦSB), and some other physical parameters like the nanotube chirality, the gate oxide thickness and the gate oxide dielectric permittivity on the static electrical performances of the transistor, particularly to determine the intrinsic properties of the nanodevice. Moreover, a compact model-simulation results based on the (I-V) characteristics was given.

Keywords: carbon nanotubes; CNTs; Schottky barrier; CNT field effect transistors; FET; nanotechnology; modelling; CNTFET; simulation.

DOI: 10.1504/IJNP.2013.054998

International Journal of Nanoparticles, 2013 Vol.6 No.2/3, pp.224 - 231

Published online: 21 Jun 2013 *

Full-text access for editors Access for subscribers Purchase this article Comment on this article