Authors: A. Chemam; S. Hamici; D.E. Mekki; R.J. Tarento
Addresses: Faculty of Sciences, Badji Mokhtar-Annaba University, LESIMS, BP 12-23000, Annaba, Algeria ' Faculty of Sciences, Badji Mokhtar-Annaba University, LESIMS, BP 12-23000, Annaba, Algeria ' Faculty of Sciences, Badji Mokhtar-Annaba University, LESIMS, BP 12-23000, Annaba, Algeria ' Université Paris Sud, LPS, Bt 510, 91405, Orsay, France
Abstract: A theoretical model accounting for the experimental results of electron beam induced current (EBIC) collection efficiency on Al-n Si diodes and Si n+p cells, subject to various heat treatments, has been put forward. Twelve samples have been investigated, i.e., monocrystals and polycrystals, oxidised and non-oxidised, and this, at three (03) different temperatures (800°C during 60 mn, 850°C during 12 mn and 900°C during 7 mn). The framework adopted has highlighted the importance of some parameters, such as the minority carrier diffusion length, their superficial recombination velocity, together with a carrier trapping velocity. The mutual influences of the material microstructure under study, the temperature and the treatment time have also been analysed.
Keywords: electron beam induced current; EBIC; oxidation; diodes; diffusion length; recombination; aluminium; silicon; heat treatment; microstructure; insulating oxides.
International Journal of Nanoparticles, 2013 Vol.6 No.2/3, pp.215 - 223
Published online: 24 Jun 2013 *Full-text access for editors Access for subscribers Purchase this article Comment on this article