Authors: Abderrezak Lahreche; Yamina Beggah; Djamel Eddine Mekki
Addresses: Department of Technology, A. Mira University, 6000 Bejaia, Algeria ' Faculty of Engineering Science, Jijel University, Zone Aouled Aissa, BP 98, 18000, Algeria ' Faculty of Science, LESIMS Laboratory, Badji Mpkhtar-Anaba University, 23000, Algeria
Abstract: An EBIC model to describe two interacting grain boundaries (GBs) for semiconductor nanostructures is proposed. The effect of surface recombination velocities of the GBs, the distance between the GBs and the diffusion length of the semiconductor on the shape of the computed EBIC current are shown. The effect of the generation volume extension on the shape and also on the resolution of the computed EBIC current is studied.
Keywords: EBIC; electron beam induced current; surface recombination velocity; grain boundaries; semiconductors; semiconductor nanostructures; nanotechnology; modelling.
International Journal of Nanoparticles, 2013 Vol.6 No.2/3, pp.208 - 214
Published online: 21 Jun 2013 *Full-text access for editors Access for subscribers Purchase this article Comment on this article