Title: Low energy electron irradiation effect on optical and electrical properties of InGaN/GaN multiple quantum well structures
Authors: E.B. Yakimov
Addresses: Institute of Microelectronics Technology, RAS, 142432, Chernogolovka, Russia
Abstract: A low energy electron beam irradiation (LEEBI) effect on the optical and electrical properties of MQW InGaN/CaN structures is discussed. It is shown that the e-beam exposure leads to a formation of new InGaN-related emission bands blue-shifted relative to initial one and to an increase of MQW-related integral emission intensity. It is shown that for changes observed the excess carriers in the MQW region are necessary. The EBIC measurements confirm that LEEBI changes the MQW properties. The role of extended defects in the effects observed is discussed.
Keywords: low energy electron beam irradiation; LEEBI; InGaN/GaN MQW; indium gallium nitride; multiple quantum wells; cathodoluminescence; electron beam induced current; EBIC; extended defects; optical properties; electrical properties; nanotechnology.
International Journal of Nanoparticles, 2013 Vol.6 No.2/3, pp.191 - 200
Published online: 21 Jun 2013 *Full-text access for editors Access for subscribers Purchase this article Comment on this article