Article: Characteristics of Al-doped TiO2 thin films grown by pulsed laser deposition Journal: International Journal of Nanoparticles (IJNP) 2013 Vol.6 No.2/3 pp.132 - 142 Abstract: Al-doped TiO2 (TiO2:Al) thin films were deposited at 450°C onto glass substrates using pulsed laser deposition method. X-rays diffraction spectra showed that the obtained films are polycrystalline of anatase structure with preferential orientation of (101) direction. AFM images, nanoparticles size and surface roughness mean square values showed that the surfaces of TiO2:Al films are smoother than that of undoped TiO2 films. A blue shift in the absorption edge of TiO2 with increasing Al concentration in the film is noteworthy as it leads to increase in the width of the optical transmission. The optical waveguiding performances of the TiO2:Al films were demonstrated by using the m-lines spectroscopy technique and the results were correlated to the structural properties. Spectroscopic ellipsometry was used to extract the optical constants of the films. The determined band gap of undoped and Al doped films varies from 3.43 to 3.61 eV, which is in accordance to Burstein-Moss shift. Inderscience Publishers - linking academia, business and industry through research

Title: Characteristics of Al-doped TiO₂ thin films grown by pulsed laser deposition

Authors: Faouzi Hanini; Yacine Bouachiba; Fouad Kermiche; Adel Taabouche; Abderrahmane Bouabellou; Tahar Kerdja; Kamel Boukheddaden

Addresses: Laboratoire Couches Minces – Interfaces, Université Mentouri Constantine, 25000, Algérie ' Laboratoire Couches Minces – Interfaces, Université Mentouri Constantine, 25000, Algérie ' Laboratoire Couches Minces – Interfaces, Université Mentouri Constantine, 25000, Algérie ' Laboratoire Couches Minces – Interfaces, Université Mentouri Constantine, 25000, Algérie ' Laboratoire Couches Minces – Interfaces, Université Mentouri Constantine, 25000, Algérie ' Centre de Développement des Techniques Avancées, Baba-Hassen, Alger 16000, Algérie ' Groupe d'Etudes de la Matière Condensée, Université de Versailles Saint-Quentin, 45 Av. des Etats Unis 78035, Versailles, France

Abstract: Al-doped TiO₂ (TiO₂:Al) thin films were deposited at 450°C onto glass substrates using pulsed laser deposition method. X-rays diffraction spectra showed that the obtained films are polycrystalline of anatase structure with preferential orientation of (101) direction. AFM images, nanoparticles size and surface roughness mean square values showed that the surfaces of TiO₂:Al films are smoother than that of undoped TiO₂ films. A blue shift in the absorption edge of TiO₂ with increasing Al concentration in the film is noteworthy as it leads to increase in the width of the optical transmission. The optical waveguiding performances of the TiO₂:Al films were demonstrated by using the m-lines spectroscopy technique and the results were correlated to the structural properties. Spectroscopic ellipsometry was used to extract the optical constants of the films. The determined band gap of undoped and Al doped films varies from 3.43 to 3.61 eV, which is in accordance to Burstein-Moss shift.

Keywords: Al doping; aluminium; titania; titanium dioxide; TiO2; structure; morphology; optical properties; waveguide; nanoparticles; nanotechnology; thin films; pulsed laser deposition; particle size; surface roughness; surface quality.

DOI: 10.1504/IJNP.2013.054988

International Journal of Nanoparticles, 2013 Vol.6 No.2/3, pp.132 - 142

Published online: 31 Mar 2014 *

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Title: Characteristics of Al-doped TiO2 thin films grown by pulsed laser deposition

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Title: Characteristics of Al-doped TiO₂ thin films grown by pulsed laser deposition