Title: Scanning laser induced current measurements on silicon wafer with through silicon via structure

Authors: Shin-ichi Takasu; Ryouta Zaizen; Woon Choi; Hajime Tomokage; Haruki Sueyoshi

Addresses: Department of Electronics Engineering and Computer Science, Fukuoka University, 8-19-1 Nanakuma, Jonan-ku, Fukuoka 814-0180, Japan ' Department of Electronics Engineering and Computer Science, Fukuoka University, 8-19-1 Nanakuma, Jonan-ku, Fukuoka 814-0180, Japan ' Department of Electronics Engineering and Computer Science, Fukuoka University, 8-19-1 Nanakuma, Jonan-ku, Fukuoka 814-0180, Japan ' Department of Electronics Engineering and Computer Science, Fukuoka University, 8-19-1 Nanakuma, Jonan-ku, Fukuoka 814-0180, Japan ' Research Center for Three Dimensional Semiconductors, Fukuoka Industry, Science and Technology Foundation, 1963-4 Higashi, Itoshima 819-1122, Japan

Abstract: The scanning laser beam induced current is measured on a silicon wafer with through silicon via (TSV) structure. The current image is obtained by changing the focused point of the infrared laser from the surface to the inside of silicon. The current contrast due to the defect of the insulating layer is obtained, and the defect point in the via hole is estimated from the brightness of the image versus distance from the surface.

Keywords: scanning laser beams; induced current; through silicon via; TSV structure; defect evaluation; insulating layer; silicon wafers; wafer defects.

DOI: 10.1504/IJNP.2013.054982

International Journal of Nanoparticles, 2013 Vol.6 No.2/3, pp.73 - 80

Published online: 21 Jun 2013 *

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