Title: Growth of (002)-oriented ZnO thin films on largely lattice-mismatched substrates using atomic layer deposition
Authors: Swee-Yong Pung; Kwang-Leong Choy; Xianghui Hou
Addresses: School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Seri Ampangan, 14300 Nibong Tebal, Pulau Pinang, Malaysia ' Faculty of Engineering, Energy and Sustainability Research Division, Department of Mechanical, Materials, and Manufacturing Engineering, University Park, University of Nottingham, Nottingham NG7 2RD, UK ' Faculty of Engineering, Energy and Sustainability Research Division, Department of Mechanical, Materials, and Manufacturing Engineering, University Park, University of Nottingham, Nottingham NG7 2RD, UK
Abstract: ZnO thin films have been successfully deposited by Atomic Layer Deposition (ALD) using Diethylzinc (DEZn) and water (H2O) as precursors. The preferred orientations of the thin films were found to be strongly dependent on the deposition temperature. (100)-oriented ZnO thin films were grown in the temperature range of 155 to 220°C, whereas (002)-oriented ZnO thin films were formed between 220 to 300°C. It is worth mentioning that ALD technique allowed ZnO thin films with preferred orientation, i.e. (002), to be deposited on both Si and glass substrates which have a large lattice mismatch to ZnO. This process capability could be attributed to the unique characteristics of a slow growth rate due to the self-limiting growth and a relatively high deposition temperature (220-300°C) which provided sufficient energy for Zn and O atoms to migrate towards <0001> in the ALD process. Besides, the (002)-oriented ZnO thin films have the best crystal quality and lowest resistivity. The thickness of as-deposited films could be controlled at nanoscale as the growth rate was proportional to the ALD process cycles.
Keywords: atomic layer deposition; photoluminescence; zinc oxide; c-oriented; X-ray diffraction; ZnO thin films; lattice-mismatched substrates; nanotechnology.
International Journal of Nanotechnology, 2013 Vol.10 No.3/4, pp.247 - 259
Published online: 05 Apr 2013 *Full-text access for editors Access for subscribers Purchase this article Comment on this article