Growth of (002)-oriented ZnO thin films on largely lattice-mismatched substrates using atomic layer deposition
by Swee-Yong Pung; Kwang-Leong Choy; Xianghui Hou
International Journal of Nanotechnology (IJNT), Vol. 10, No. 3/4, 2013

Abstract: ZnO thin films have been successfully deposited by Atomic Layer Deposition (ALD) using Diethylzinc (DEZn) and water (H₂O) as precursors. The preferred orientations of the thin films were found to be strongly dependent on the deposition temperature. (100)-oriented ZnO thin films were grown in the temperature range of 155 to 220°C, whereas (002)-oriented ZnO thin films were formed between 220 to 300°C. It is worth mentioning that ALD technique allowed ZnO thin films with preferred orientation, i.e. (002), to be deposited on both Si and glass substrates which have a large lattice mismatch to ZnO. This process capability could be attributed to the unique characteristics of a slow growth rate due to the self-limiting growth and a relatively high deposition temperature (220-300°C) which provided sufficient energy for Zn and O atoms to migrate towards <0001> in the ALD process. Besides, the (002)-oriented ZnO thin films have the best crystal quality and lowest resistivity. The thickness of as-deposited films could be controlled at nanoscale as the growth rate was proportional to the ALD process cycles.

Online publication date: Fri, 05-Apr-2013

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