Title: The effect of atomic density gradient in electromigration

Authors: Yuanxiang Zhang; Yong Liu; Lihua Liang; Xuejun Fan

Addresses: College of Mechanical Engineering, Quzhou University, Quzhou 324000, China. ' Fairchild Semiconductor Corp., 82 Running Hill Road, South Portland, ME 04106, USA. ' Fairchild-ZJUT Microelectronic Packaging Joint Lab, Zhejiang University of Technology, Hangzhou 310014, China. ' Department of Mechanical Engineering, Lamar University, Beaumont, TX 77705, USA

Abstract: This paper studies the electromigration (EM) failure of interconnect structure and solder joint in a wafer level chip scale package (WL-CSP) based on atomic flux divergence (AFD) method. The impact of atomic density gradient (ADG) on the divergence of the atomic fluxes is investigated. The simulation results show that the traditional AFD method, which neglects the effect of atomic density gradient, can result in significant errors in predicting solder joint failures in a WL-CSP; while the AFD method with the consideration of the atomic density gradient has shown more reasonable results.

Keywords: electromigration failure; atomic density gradient; ADG; interconnects; solder joints; atomic flux divergence; AFD; wafer level CSP; chip scale packages; WL-CSP; joint failures.

DOI: 10.1504/IJMSI.2012.046186

International Journal of Materials and Structural Integrity, 2012 Vol.6 No.1, pp.36 - 53

Published online: 18 Sep 2014 *

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