Title: A method for characterising residual strains around femtosecond laser microexploded waveguide by nanoindentation

Authors: Yan-Shen Wang; Shi-Liang Qu; Yu-Xian Gai; Shen Dong; Ying-Chun Liang

Addresses: Department of Mechanical Engineering, School of Naval Architecture, Harbin Institute of Technology, Weihai, Weihai, 264209, China. ' Department of Optoelectronic Science, Harbin Institute of Technology, Weihai, Weihai, 264209, China. ' Department of Mechanical Engineering, School of Naval Architecture, Harbin Institute of Technology, Weihai, Weihai, 264209, China. ' Center for Precision Engineering, Harbin Institute of Technology, Harbin, 150001, China. ' Center for Precision Engineering, Harbin Institute of Technology, Harbin, 150001, China

Abstract: In this paper, quartz wafer was microexploded by a commercial Ti:Sapphire regenerative amplifier (spectra physics, spitfire). And nanomechanical properties of the surface area that just above the laser induced waveguide were measured by a commercial nanomechanical test system (nano indenter XP, MTS Inc.). Indentation depth dependent changes in hardness can be found from nanoindentation experiments, which reflected the variations in plastic residual strains. Using the formula brought out in our previous work that correlate residual strains with hardness values measured by nanoindentation, the indentation depth dependent distribution of plastic residual strains in the area above femtosecond laser microexploded optical waveguide was explored. The mean plastic residual strains decreased from 0.048 to 0.01 in the indentation depth of 200 nm?700 nm, and kept to be 0.01 when the indentation depth was larger than 700 nm.

Keywords: nanoindentation depth; residual strain; femtosecond lasers; quartz wafers; microexplosion; nanomechanical properties; nanomanufacturing; nanotechnology; hardness.

DOI: 10.1504/IJNM.2011.042475

International Journal of Nanomanufacturing, 2011 Vol.7 No.3/4, pp.267 - 278

Received: 22 Nov 2010
Accepted: 25 Mar 2011

Published online: 14 Sep 2011 *

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